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| Current - Continuous Drain (Id) @ 25°c | 103A (Tc) |
| Drain To Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Fet Feature | - |
| Fet Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 232 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3020 pF @ 1000 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 500W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 40A, 20V |
| Rohs Status | ROHS3 Compliant |
| Series | - |
| Standard Package | 30 |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +23V, -10V |
| Vgs(th) (Max) @ Id | 2.8V @ 3mA |
| Datasheet |