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Available Quantity : 9172
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Specifications

Current - Continuous Drain (Id) @ 25°c42A (Tc)
Drain To Source Voltage (Vdss)55V
Drive Voltage (Max Rds On, Min Rds On)10V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2840 pF @ 25 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageBulk
Package / CaseTO-252-3, DPak (2L+Tab)
Power Dissipation (Max)140W (Tc)
Rds On (Max) @ Id, Vgs7.5mOhm @ 42A, 10V
SeriesHEXFET®
Standard Package1
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 100µA