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FF06MR12A04MA2AKSA1

Manufacturer
Infineon
Mfr. Part #
FF06MR12A04MA2AKSA1
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
FF06MR12A04MA2AKSA1
Description
1.2kV 190A Through Hole 11-PowerDIP Module (2.091", 53.10mm)
Stock Info
Packaging
Tube
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon

Specifications

Configuration2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°c190A
Drain To Source Voltage (Vdss)1.2kV
Gate Charge (Qg) (Max) @ Vgs420nC @ 18V
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds10100pF @ 850V
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Package / Case11-PowerDIP Module
Power - Max20mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs5.56mOhm @ 190A, 18V
SeriesHybridPACK™
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id4.55V @ 60mA