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SI4884BDY-T1-GE3

Manufacturer
Vishay
Mfr. Part #
SI4884BDY-T1-GE3
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
SI4884BDY-T1-GE3
Description
N-Channel 30V 16.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SOIC
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Vishay
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Specifications

Current - Continuous Drain (Id) @ 25°c16.5A (Tc)
Drain To Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1525 pF @ 15 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-SOIC
Power Dissipation (Max)2.5W (Ta), 4.45W (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
Rohs CompliantYes
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA