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TSM300NB06LDCR RLG

Manufacturer
Taiwan Semiconductor
Mfr. Part #
TSM300NB06LDCR RLG
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
TSM300NB06LDCR RLG
Description
60V 5A (Ta), 24A (Tc) Surface Mount 8-PowerTDFN
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Taiwan Semiconductor

Specifications

Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°c5A (Ta), 24A (Tc)
Drain To Source Voltage (Vdss)60V
Fet FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds966pF @ 30V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power - Max2W (Ta), 40W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs30mOhm @ 5A, 10V
Rohs StatusROHS3 Compliant
Series-
Standard Package2,500
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA