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TSM300NB06LCV RGG

Manufacturer
Taiwan Semiconductor
Mfr. Part #
TSM300NB06LCV RGG
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
TSM300NB06LCV RGG
Description
N-Channel 60V 5A (Ta), 24A (Tc) 1.9W (Ta), 39W (Tc) Surface Mount 8-PowerWDFN
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Taiwan Semiconductor

Specifications

Current - Continuous Drain (Id) @ 25°c5A (Ta), 24A (Tc)
Drain To Source Voltage (Vdss)60V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds962 pF @ 30 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerWDFN
Power Dissipation (Max)1.9W (Ta), 39W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs30mOhm @ 5A, 10V
Rohs StatusROHS3 Compliant
Series-
Standard Package5,000
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA