Part Image
Image is for Reference Only

TSM130NH08LCR RLG

Manufacturer
Taiwan Semiconductor
Mfr. Part #
TSM130NH08LCR RLG
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
TSM130NH08LCR RLG
Description
N-Channel 80V 10A (Ta), 54A (Tc) 82W (Tc) Surface Mount, Wettable Flank 8-PowerTDFN
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Taiwan Semiconductor

Specifications

Current - Continuous Drain (Id) @ 25°c10A (Ta), 54A (Tc)
Drain To Source Voltage (Vdss)80V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds975 pF @ 40 V
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
Package / Case8-PowerTDFN
Power Dissipation (Max)82W (Tc)
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs13mOhm @ 27A, 10V
SeriesPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.2V @ 250µA