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2SD2012

Manufacturer
STMicroelectronics
Mfr. Part #
2SD2012
Category
BJT- Bipolar Junction Transistors
SKU
2SD2012
Description
Bipolar (BJT) Transistor NPN 60V 3A 3MHz Through Hole TO-220-3
Stock Info
Packaging
Tube
Std Package Qty
50
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Specifications

Current - Collector (Ic) (Max)3A
Current - Collector Cutoff (Max)100µA (ICBO)
Dc Current Gain (Hfe) (Min) @ Ic, Vce100 @ 500mA, 5V
Frequency - Transition3MHz
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-220-3
Package Quantity50
Power25W
Product StatusObsolete
Rohs StatusROHS3 Compliant
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)60V