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Obsolete & hard-to-find sourcing|In-house lab|AS6081 founding member|AS6171 · AS9120 · IDEA-STD-1010|Since 1994
GP2T080A120H
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Manufacturer
Mfr. Part #
GP2T080A120H
SKU
GP2T080A120H
Description
N-Channel 1200V 35A (Tc) 188W (Tc) Through Hole TO-247-4
Quantity
Packaging
Tube
Specifications
| Current - Continuous Drain (Id) @ 25°c | 35A (Tc) |
| Drain To Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Fet Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1377 pF @ 1000 V |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 188W (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |