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HT8MD5HTB1

Manufacturer
Rohm
Mfr. Part #
HT8MD5HTB1
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
HT8MD5HTB1
Description
80V 3.5A (Ta), 9A (Tc), 3A (Ta), 8.5A (Tc) Surface Mount 8-PowerVDFN
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Rohm

Specifications

ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°c3.5A (Ta), 9A (Tc), 3A (Ta), 8.5A (Tc)
Drain To Source Voltage (Vdss)80V
Gate Charge (Qg) (Max) @ Vgs3.1nC @ 10V, 17.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds90pF @ 40V, 720pF @ 40V
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
Package / Case8-PowerVDFN
Power - Max2W (Ta), 13W (Tc)
Rds On (Max) @ Id, Vgs112mOhm @ 3.5A, 10V, 165mOhm @ 3A, 10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA