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2N5551BU

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Manufacturer
Mfr. Part #
2N5551BU
SKU
2N5551BU
Description
Bipolar (BJT) Transistor NPN 160V 600mA 100MHz Through Hole TO-226-3
Quantity
Packaging
Bulk Pack

Specifications

Current - Collector (Ic) (Max)600mA
Current - Collector Cutoff (Max)50nA (ICBO)
Dc Current Gain (Hfe) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition100MHz
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3
Package Quantity10,000
Power625mW
Product StatusActive
Rohs StatusROHS3 Compliant
Series-
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)160V