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Obsolete & hard-to-find sourcing|In-house lab|AS6081 founding member|AS6171 · AS9120 · IDEA-STD-1010|Since 1994
2SB647A-B-AP
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Manufacturer
Mfr. Part #
2SB647A-B-AP
SKU
2SB647A-B-AP
Description
Bipolar (BJT) Transistor PNP 100V 1A 140MHz 900 mW Through Hole TO-226-3, TO-92-3 Long Body, Formed Leads
Quantity
Packaging
Tape Box
Specifications
| Current - Collector (Ic) (Max) | 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| Dc Current Gain (Hfe) (Min) @ Ic, Vce | 60 @ 150mA, 5V |
| Frequency - Transition | 140MHz |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Power - Max | 900 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 100V |