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2SA950-O-AP

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Mfr. Part #
2SA950-O-AP
SKU
2SA950-O-AP
Description
Bipolar (BJT) Transistor PNP 30V 800mA 120MHz 600 mW Through Hole TO-226-3
Quantity
Packaging
Tape Box

Estimated Availability: 6,354
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Specifications

Current - Collector (Ic) (Max)800mA
Current - Collector Cutoff (Max)100nA (ICBO)
Dc Current Gain (Hfe) (Min) @ Ic, Vce100 @ 100mA, 1V
Frequency - Transition120MHz
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
Package / CaseTO-226-3
Power - Max600 mW
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic700mV @ 20mA, 500mA
Voltage - Collector Emitter Breakdown (Max)30V