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Obsolete & hard-to-find sourcing|In-house lab|AS6081 founding member|AS6171 · AS9120 · IDEA-STD-1010|Since 1994
IXSJ80N120R1
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Manufacturer
Mfr. Part #
IXSJ80N120R1
SKU
IXSJ80N120R1
Description
N-Channel 1200V 85A (Tc) 266W Through Hole TO-247-3
Quantity
Packaging
Tube
Specifications
| Current - Continuous Drain (Id) @ 25°c | 85A (Tc) |
| Drain To Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Fet Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4522 pF @ 800 V |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 266W |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 40A, 18V |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +21V, -4V |
| Vgs(th) (Max) @ Id | 4.8V @ 22.2mA |