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BC858AE6327HTSA1

Manufacturer
Infineon
Mfr. Part #
BC858AE6327HTSA1
Category
BJT- Bipolar Junction Transistors
SKU
BC858AE6327HTSA1
Description
Bipolar (BJT) Transistor PNP 30V 100mA 250MHz 330 mW Surface Mount SOT-23-3
Stock Info
Packaging
Reel
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Specifications

Current - Collector (Ic) (Max)100mA
Current - Collector Cutoff (Max)15nA (ICBO)
Dc Current Gain (Hfe) (Min) @ Ic, Vce125 @ 2mA, 5V
Frequency - Transition250MHz
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
Package / CaseSOT-23-3
Power - Max330 mW
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)30V