| Current - Continuous Drain (Id) @ 25°c | 37A (Tc) |
| Drain To Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Fet Feature | - |
| Fet Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 600 V |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 150W (Tc) |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 13.2A, 15V |
| Rohs Status | ROHS3 Compliant |
| Series | C3M™ |
| Standard Package | 30 |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +15V, -4V |
| Vgs(th) (Max) @ Id | 3.6V @ 5mA |