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IRLD110PBF

Manufacturer
Mfr. Part #
IRLD110PBF
SKU
IRLD110PBF
Description
N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP
Stock Info
Packaging
Tube
Std Package Qty
100
Available Quantity : 7621
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Specifications

Current - Continuous Drain (Id) @ 25°c1A (Ta)
Drain To Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / Case4-DIP
Power Dissipation (Max)1.3W (Ta)
Rds On (Max) @ Id, Vgs540mOhm @ 600mA, 5V
Rohs StatusROHS3 Compliant
Series-
Standard Package100
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±10V
Vgs(th) (Max) @ Id2V @ 250µA
Datasheet

pdfIRLD110PBF