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STP26N65DM2

Manufacturer
Mfr. Part #
STP26N65DM2
SKU
STP26N65DM2
Description
N-Channel 650V 20A (Tc) 170W (Tc) Through Hole TO-220-3
Quantity
Packaging
Tube

Specifications

Current - Continuous Drain (Id) @ 25°c20A (Tc)
Drain To Source Voltage (Vdss)650V
Drive Voltage (Max Rds On, Min Rds On)10V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 100 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)170W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs190mOhm @ 10A, 10V
Rohs StatusROHS3 Compliant
SeriesMDmesh™ DM2
Standard Package1,000
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA
Datasheet

pdfSTP26N65DM2