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STI20N65M5

Manufacturer
Mfr. Part #
STI20N65M5
SKU
STI20N65M5
Description
N-Channel 650V 18A (Tc) 130W (Tc) Through Hole TO-262-3
Quantity
Packaging
Tube

Specifications

Current - Continuous Drain (Id) @ 25°c18A (Tc)
Drain To Source Voltage (Vdss)650V
Drive Voltage (Max Rds On, Min Rds On)10V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1434 pF @ 100 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-262-3
Power Dissipation (Max)130W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs190mOhm @ 9A, 10V
Rohs StatusROHS3 Compliant
SeriesMDmesh™ V
Standard Package1,000
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA
Datasheet

pdfSTI20N65M5