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SCTWA35N65G2V

Manufacturer
Mfr. Part #
SCTWA35N65G2V
SKU
SCTWA35N65G2V
Description
N-Channel 650V 45A (Tc) 208W (Tc) Through Hole TO-247-3
Quantity
Packaging
Tube

Specifications

Current - Continuous Drain (Id) @ 25°c45A (Tc)
Drain To Source Voltage (Vdss)650V
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds73000 pF @ 400 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)208W (Tc)
Rds On (Max) @ Id, Vgs72mOhm @ 20A, 20V
Rohs StatusROHS3 Compliant
Series-
Standard Package30
TechnologySiCFET (Silicon Carbide)
Vgs (Max)+20V, -5V
Vgs(th) (Max) @ Id3.2V @ 1mA