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2ST501T

Manufacturer
STMicroelectronics
Mfr. Part #
2ST501T
Category
BJT- Bipolar Junction Transistors
SKU
2ST501T
Description
Bipolar (BJT) Transistor NPN - Darlington 350V 4A - Through Hole TO-220-3
Stock Info
Packaging
Tube
Std Package Qty
50
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Specifications

Current - Collector (Ic) (Max)4A
Current - Collector Cutoff (Max)100µA
Dc Current Gain (Hfe) (Min) @ Ic, Vce2000 @ 2A, 2V
Frequency - Transition-
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageTube
Package / CaseTO-220-3
Package Quantity50
Power100W
Product StatusActive
Rohs StatusROHS3 Compliant
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic1.5V @ 2mA, 2A
Voltage - Collector Emitter Breakdown (Max)350V
Datasheet

pdf2ST501T