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NVVR26A120M1WST

Manufacturer
On Semi
Mfr. Part #
NVVR26A120M1WST
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
NVVR26A120M1WST
Description
1.2kV 400A (Tj) Through Hole 15-PowerDIP Module (2.441", 62.00mm)
Stock Info
Packaging
Tube
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by On Semi

Specifications

Configuration2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°c400A (Tj)
Drain To Source Voltage (Vdss)1.2kV
Gate Charge (Qg) (Max) @ Vgs1.75µC @ 20V
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds31700pF @ 800V
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Package / Case15-PowerDIP Module
Power - Max1kW (Tj)
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2.6mOhm @ 400A, 20V
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id3.2V @ 150mA