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NTMS10P02R2G

Manufacturer
On Semi
Mfr. Part #
NTMS10P02R2G
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
NTMS10P02R2G
Description
P-Channel 20V 8.8A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by On Semi

Specifications

Current - Continuous Drain (Id) @ 25°c8.8A (Ta)
Drain To Source Voltage (Vdss)20V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Fet Feature-
Fet TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3640 pF @ 16 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-SOIC
Power Dissipation (Max)1.6W (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs14mOhm @ 10A, 4.5V
Rohs StatusROHS3 Compliant
Series-
Standard Package2,500
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.2V @ 250µA
Datasheet

pdfNTMS10P02R2G