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NTD18N06LT4G

Manufacturer
On Semi
Mfr. Part #
NTD18N06LT4G
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
NTD18N06LT4G
Description
N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface Mount TO-252-3, DPak (2L+Tab)
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by On Semi

Specifications

Current - Continuous Drain (Id) @ 25°c18A (Ta)
Drain To Source Voltage (Vdss)60V
Drive Voltage (Max Rds On, Min Rds On)5V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds675 pF @ 25 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2L+Tab)
Power Dissipation (Max)2.1W (Ta), 55W (Tj)
Product StatusActive
Rds On (Max) @ Id, Vgs65mOhm @ 9A, 5V
Rohs StatusROHS3 Compliant
Series-
Standard Package2,500
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2V @ 250µA
Datasheet

pdfNTD18N06LT4G