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NJVMJD122T4G

Manufacturer
On Semi
Mfr. Part #
NJVMJD122T4G
Category
BJT- Bipolar Junction Transistors
SKU
NJVMJD122T4G
Description
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 4MHz Surface Mount TO-252-3, DPak (2L+Tab)
Stock Info
Packaging
Reel
View All BJT- Bipolar Junction Transistors by On Semi

Specifications

Current - Collector (Ic) (Max)8A
Current - Collector Cutoff (Max)10µA
Dc Current Gain (Hfe) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition4MHz
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2L+Tab)
Package Quantity2,500
Power1.75W
Product StatusActive
Rohs StatusROHS3 Compliant
SeriesAutomotive, AEC-Q101
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Voltage - Collector Emitter Breakdown (Max)100V
Datasheet

pdfNJVMJD122T4G