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MJD112-1G

Manufacturer
Mfr. Part #
MJD112-1G
SKU
MJD112-1G
Description
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz Through Hole TO-251-3
Stock Info
Packaging
Tube
Std Package Qty
75
Available Quantity : 5032
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Specifications

Current - Collector (Ic) (Max)2A
Current - Collector Cutoff (Max)20µA
Dc Current Gain (Hfe) (Min) @ Ic, Vce1000 @ 2A, 3V
Frequency - Transition25MHz
Mounting TypeThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
PackageTube
Package / CaseTO-251-3
Package Quantity75
Power1.75W
Rohs StatusROHS3 Compliant
Series-
Transistor TypeNPN - Darlington
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Voltage - Collector Emitter Breakdown (Max)100V
Datasheet

pdfMJD112-1G