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2SB1216S-E

Manufacturer
On Semi
Mfr. Part #
2SB1216S-E
Category
BJT- Bipolar Junction Transistors
SKU
2SB1216S-E
Description
Bipolar (BJT) Transistor PNP 100V 4A 130MHz Through Hole TO-251-3
Stock Info
Available : 10916
Packaging
Bulk Pack
Std Package Qty
500
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Specifications

Current - Collector (Ic) (Max)4A
Current - Collector Cutoff (Max)1µA (ICBO)
Dc Current Gain (Hfe) (Min) @ Ic, Vce140 @ 500mA, 5V
Frequency - Transition130MHz
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
PackageBulk
Package / CaseTO-251-3
Package Quantity500
Power1W
Rohs StatusROHS3 Compliant
Series-
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)100V
Datasheet

pdf2SB1216S-E