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IRFP4668PBF

Manufacturer
Mfr. Part #
IRFP4668PBF
SKU
IRFP4668PBF
Description
N-Channel 200V 130A (Tc) 520W (Tc) Through Hole TO-247-3
Stock Info
Packaging
Tube
Std Package Qty
25
Available Quantity : 100
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Specifications

Current - Continuous Drain (Id) @ 25°c130A (Tc)
Drain To Source Voltage (Vdss)200V
Drive Voltage (Max Rds On, Min Rds On)10V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10720 pF @ 50 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-247-3
Power Dissipation (Max)520W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs9.7mOhm @ 81A, 10V
Rohs StatusROHS3 Compliant
SeriesHEXFET®
Standard Package25
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA
Datasheet

pdfIRFP4668PBF