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IRFBA90N20DPBF

Manufacturer
Mfr. Part #
IRFBA90N20DPBF
SKU
IRFBA90N20DPBF
Description
N-Channel 200V 98A (Tc) 650W (Tc) Through Hole TO-273AA
Stock Info
Packaging
Tube
Std Package Qty
1000
Available Quantity : 24079
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Specifications

Current - Continuous Drain (Id) @ 25°c98A (Tc)
Drain To Source Voltage (Vdss)200V
Drive Voltage (Max Rds On, Min Rds On)10V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6080 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-273AA
Power Dissipation (Max)650W (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 59A, 10V
Rohs StatusROHS3 Compliant
SeriesHEXFET®
Standard Package1,000
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA
Datasheet

pdfIRFBA90N20DPBF