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| Current - Continuous Drain (Id) @ 25°c | 10A |
| Drain To Source Voltage (Vdss) | 20V |
| Fet Feature | Logic Level Gate |
| Fet Type | 2 N-Channel (Dual) |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Package / Case | 8-SOIC |
| Power - Max | 2W |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Rohs Status | ROHS3 Compliant |
| Series | HEXFET® |
| Standard Package | 3,800 |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Datasheet |