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IRF630NPBF

Manufacturer
Mfr. Part #
IRF630NPBF
SKU
IRF630NPBF
Description
N-Channel 200V 9.3A (Tc) 82W (Tc) Through Hole TO-220-3
Stock Info
Packaging
Tube
Std Package Qty
50
Available Quantity : 855
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Specifications

Current - Continuous Drain (Id) @ 25°c9.3A (Tc)
Drain To Source Voltage (Vdss)200V
Drive Voltage (Max Rds On, Min Rds On)10V
Fet Feature-
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds575 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-220-3
Power Dissipation (Max)82W (Tc)
Product StatusActive
Rds On (Max) @ Id, Vgs300mOhm @ 5.4A, 10V
Rohs StatusROHS3 Compliant
SeriesHEXFET®
Standard Package50
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA
Datasheet

pdfIRF630NPBF