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IPW60R125C6

Manufacturer
Infineon
Mfr. Part #
IPW60R125C6
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
IPW60R125C6
Description
MOSFET N-Channel, Metal Oxide 600V 30A (Tc) Through Hole
Stock Info
Available : 9302
Packaging
Tube
Std Package Qty
240
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon
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Specifications

Current - Continuous Drain (Id) @ 25°c30A (Tc)
Drain To Source Voltage (Vdss)600V
FamilyFETs - Single
Fet FeatureStandard
Fet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs96nC @ 10V
Input Capacitance (Ciss) @ Vds2127pF @ 100V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberIPW60R125C6
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max219W
Rds On (Max) @ Id, Vgs125 mOhm @ 14.5A, 10V
SeriesCoolMOS
Standard Package240
Vgs(th) (Max) @ Id3.5V @ 960µA
Datasheet

pdfIPW60R125C6