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IPD180N10N3 G

Manufacturer
Infineon
Mfr. Part #
IPD180N10N3 G
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
IPD180N10N3 G
Description
MOSFET N-Channel, Metal Oxide 100V Surface Mount
Stock Info
Available : 6907
Packaging
Reel
Std Package Qty
2500
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Specifications

Current - Continuous Drain (Id) @ 25â°c43A (Tc)
Drain To Source Voltage (Vdss)100V
FamilyFETs - Single
Fet FeatureStandard
Fet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs25nC @ 10V
Input Capacitance (Ciss) @ Vds1800pF @ 50V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberIPD180N10N3 G
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Power - Max71W
Rds On (Max) @ Id, Vgs18 mOhm @ 33A, 10V
SeriesOptiMOS
Standard Package2,500
Vgs(th) (Max) @ Id3.5V @ 33µA
Datasheet

pdfIPD180N10N3 G