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IPD031N06L3 G

Manufacturer
Infineon
Mfr. Part #
IPD031N06L3 G
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
IPD031N06L3 G
Description
MOSFET N-Channel, Metal Oxide 60V Surface Mount
Stock Info
Available : 8302
Packaging
Reel
Std Package Qty
2500
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon
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Specifications

Current - Continuous Drain (Id) @ 25â°c100A (Tc)
Drain To Source Voltage (Vdss)60V
FamilyFETs - Single
Fet FeatureLogic Level Gate
Fet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs79nC @ 4.5V
Input Capacitance (Ciss) @ Vds13000pF @ 30V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberIPD031N06L3 G
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Power - Max167W
Rds On (Max) @ Id, Vgs3.1 mOhm @ 100A, 10V
SeriesOptiMOS
Standard Package2,500
Vgs(th) (Max) @ Id2.2V @ 93µA
Datasheet

pdfIPD031N06L3 G