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IPB60R190C6

Manufacturer
Infineon
Mfr. Part #
IPB60R190C6
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
IPB60R190C6
Description
MOSFET N-Channel, Metal Oxide 600V 20.2A (Tc) Surface Mount
Stock Info
Available : 5521
Packaging
Reel
Std Package Qty
1000
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon
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Specifications

Current - Continuous Drain (Id) @ 25°c20.2A (Tc)
Drain To Source Voltage (Vdss)600V
FamilyFETs - Single
Fet FeatureStandard
Fet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs63nC @ 10V
Input Capacitance (Ciss) @ Vds1400pF @ 100V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberIPB60R190C6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max151W
Rds On (Max) @ Id, Vgs190 mOhm @ 9.5A, 10V
SeriesCoolMOS
Standard Package1,000
Vgs(th) (Max) @ Id3.5V @ 630µA
Datasheet

pdfIPB60R190C6