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IPB042N10N3 G

Manufacturer
Infineon
Mfr. Part #
IPB042N10N3 G
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
IPB042N10N3 G
Description
MOSFET N-Channel, Metal Oxide 100V Surface Mount
Stock Info
Available : 6872
Packaging
Reel
Std Package Qty
1000
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Specifications

Current - Continuous Drain (Id) @ 25â°c100A (Tc)
Drain To Source Voltage (Vdss)100V
FamilyFETs - Single
Fet FeatureStandard
Fet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs117nC @ 10V
Input Capacitance (Ciss) @ Vds8410pF @ 50V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberIPB042N10N3 G
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Power - Max214W
Rds On (Max) @ Id, Vgs4.2 mOhm @ 50A, 10V
SeriesOptiMOS
Standard Package1,000
Vgs(th) (Max) @ Id3.5V @ 150µA
Datasheet

pdfIPB042N10N3 G