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BSZ086P03NS3E G

Manufacturer
Infineon
Mfr. Part #
BSZ086P03NS3E G
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
BSZ086P03NS3E G
Description
MOSFET P-Channel, Metal Oxide 30V Surface Mount
Stock Info
Available : 11000
Packaging
Reel
Std Package Qty
5000
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon
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Specifications

Current - Continuous Drain (Id) @ 25â°c13.5A (Ta), 40A (Tc)
Drain To Source Voltage (Vdss)30V
FamilyFETs - Single
Fet FeatureStandard
Fet TypeMOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs57.5nC @ 10V
Input Capacitance (Ciss) @ Vds4785pF @ 15V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberBSZ086P03NS3E G
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max69W
Rds On (Max) @ Id, Vgs8.6 mOhm @ 20A, 10V
SeriesOptiMOS
Standard Package5,000
Vgs(th) (Max) @ Id1.9V @ 105µA
Datasheet

pdfBSZ086P03NS3E G