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BSS84P H6327

Manufacturer
Infineon
Mfr. Part #
BSS84P H6327
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
BSS84P H6327
Description
MOSFET P-Channel, Metal Oxide 60V Surface Mount
Stock Info
Available : 8144
Packaging
Reel
Std Package Qty
3000
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon
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Specifications

Current - Continuous Drain (Id) @ 25â°c170mA (Ta)
Drain To Source Voltage (Vdss)60V
FamilyFETs - Single
Fet FeatureLogic Level Gate
Fet TypeMOSFET P-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs1.5nC @ 10V
Input Capacitance (Ciss) @ Vds19pF @ 25V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberBSS84P H6327
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max360mW
Rds On (Max) @ Id, Vgs8 Ohm @ 170mA, 10V
SeriesSIPMOS®
Standard Package3,000
Vgs(th) (Max) @ Id2V @ 20µA
Datasheet

pdfBSS84P H6327