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BSS127 H6327

Manufacturer
Infineon
Mfr. Part #
BSS127 H6327
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
BSS127 H6327
Description
MOSFET N-Channel, Metal Oxide 600V Surface Mount
Stock Info
Available : 7980
Packaging
Reel
Std Package Qty
3000
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon
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Specifications

Current - Continuous Drain (Id) @ 25â°c21mA (Ta)
Drain To Source Voltage (Vdss)600V
FamilyFETs - Single
Fet FeatureLogic Level Gate, 4.5V Drive
Fet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs1nC @ 10V
Input Capacitance (Ciss) @ Vds28pF @ 25V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberBSS127 H6327
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max500mW
Rds On (Max) @ Id, Vgs500 Ohm @ 16mA, 10V
SeriesSIPMOS®
Standard Package3,000
Vgs(th) (Max) @ Id2.6V @ 8µA
Datasheet

pdfBSS127 H6327