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BSC082N10LS G

Manufacturer
Infineon
Mfr. Part #
BSC082N10LS G
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
BSC082N10LS G
Description
MOSFET N-Channel, Metal Oxide 100V Surface Mount
Stock Info
Available : 13004
Packaging
Reel
Std Package Qty
5000
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon
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Specifications

Current - Continuous Drain (Id) @ 25â°c13.8A (Ta), 100A (Tc)
Drain To Source Voltage (Vdss)100V
FamilyFETs - Single
Fet FeatureLogic Level Gate
Fet TypeMOSFET N-Channel, Metal Oxide
Gate Charge (Qg) @ Vgs104nC @ 10V
Input Capacitance (Ciss) @ Vds7400pF @ 50V
Lead Free Status / Rohs StatusLead free / RoHS Compliant
Manufacturer Part NumberBSC082N10LS G
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max156W
Rds On (Max) @ Id, Vgs8.2 mOhm @ 100A, 10V
SeriesOptiMOS
Standard Package5,000
Vgs(th) (Max) @ Id2.4V @ 110µA
Datasheet

pdfBSC082N10LS G