| Current - Continuous Drain (Id) @ 25°c | 18A (Ta) |
| Drain To Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Fet Feature | - |
| Fet Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 50V |
| Manufacturer Part Number | EPC2016C |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Die |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 11A, 5V |
| Rohs Status | ROHS3 Compliant |
| Series | eGaN® |
| Standard Package | 1 |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |